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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • 1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes 
    Fenenko, L.; Guoliang Mao; Akihiro Orita; Junzo Otera; Smertenko, P.; Svechnikov, G.; Jun-ichi Nishide; Hiroyuki Sasabe; Chihaya Adachi (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We report on the photophysical properties of 1,4-bis(2,2-diphenylethenyl)benzene (PEB) in a solution and a solid state. A poor blue photoluminescence efficiency of PEB in a solution dramatically increases in the deposited ...
  • A facile route for preparation of CdS nanoparticles 
    Maleki, M.; Sasani Ghamsari, M.; Mirdamadi, Sh.; Ghasemzadeh, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdS nanoparticles have been synthesized by a chemical reaction route using ethylenediamine as a complexing agent. The nanoparticles were characterized using techniques such as X-ray powder diffraction (XRD), scanning ...
  • Analysis of methods for high-speed forming the relief microimages on metallic substrates 
    Kryuchin, A.A.; Pankratova, A.V.; Kassko, I.A.; Nagorny, F.V.; Chirkov, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The use of methods of ion and electrochemical etching of metallic substrates to obtain relief microstructures with micron and submicron sizes is considered. Presented are the results of experimental researches of processes ...
  • Boron, aluminum, nitrogen, oxygen impurities in silicon carbide 
    Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during ...
  • Calculation of electron mobility and effect of dislocation scattering in GaN 
    Kundu, J.; Sarkar, C.K.; Mallick, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important ...
  • Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films 
    Kosyak, V.V.; Opanasyuk, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on ...
  • Calculation of the metal reflectivity with taking polarization into consideration 
    Vakulenko, O.V.; Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical properties of free electrons in the conduction band of metal are considered. It is shown that the conventional Drude theory does not take shielding of the external electrical field by mobile electrons into account. ...
  • Calculation of the spectra of characteristic electron losses in indium bromide 
    Kolinko, M.O.; Bovgyra, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy ...
  • Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing 
    Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching ...
  • Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region 
    Borblik, V.L.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as ...
  • Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation 
    Fedosov, A.V.; Koval, Y.V.; Jashchinskij, L.V.; Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of researches of the kinetic effects in crystals CdSb are presented and discussed.
  • Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics 
    Dmitruk, N.L.; Mayeva, O.I.; Korovin, A.V.; Mamykin, S.V.; Sosnova, M.V.; Yastrubchak, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The optical properties of multilayer structures consisting of dielectric, conductivity-oxide and nanoscaled metal layers, deposited on the planar substrates (witness samples) and surface relief ones (diffraction gratings) ...
  • Charge characteristics of the MOS structures with oxide films containing Si nanocrystals 
    Begun, E.V.; Bratus’, O.L.; Evtukh, A.A.; Kaganovich, E.B.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage ...
  • Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering 
    Khomenkova, L.; Korsunska, N.; Sheinkman, M.; Stara, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions ...
  • Cluster morphology silicon's nanoparticle 
    Kovalchuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is proposed to use silicon polyhedral atomic clusters (ACs) in the study of nanoparticles. A scheme of the parametrized density functional theory for calculations of the atomic and electronic structures of these ...
  • Coherent thermal radiation of Fabry-Perot resonator structures 
    Kollyukh, O.G.; Kyslyi, V.P.; Liptuga, A.I.; Morozhenko, V.; Pipa, V.I.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The coherent thermal radiation from semiconductor plane-parallel resonator structures is investigated both theoretically and experimentally. The coherent properties of thermal radiation from these objects are manifested ...
  • Compensation of hole conductivity in CdTe crystals doped with Cr 
    Nikonyuk, E.S.; Zakharuk, Z.I.; Kuchma, M.I.; Kovalets, M.O.; Rarenko, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. ...
  • Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors 
    Popovych, K.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the ...
  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...

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