Анотація:
We have studied the effect of electron irradiation on photoelectrical and optical
properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of
gallium with thicknesses of 1…5 µm, obtained by the method of molecular beam epitaxy
on substrates BaF₂ (III).