Using ion beams for creation of nanostructures on the surface of high-stable materials

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 1
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Using ion beams for creation of nanostructures on the surface of high-stable materials

Gorbov, I.V. ; Petrov, V.V. ; Kryuchyn, A.A.

Інший ID: PACS 81.07.-b

URI: http://dspace.nbuv.gov.ua/handle/123456789/117660

Посилання: Using ion beams for creation of nanostructures on the surface of high-stable materials / I.V. Gorbov, V.V. Petrov, A.A. Kryuchyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 27-29. — Бібліогр.: 5 назв. — англ.

Підтримка: The authors thank the staff of V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine for their assistance in nanostructure measurements.

Дата: 2007

Завантажень: 345

Using ion beams for creation of nanostructures on the surface of high-stable materials

Анотація:

Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface have been analyzed. Application of glass substrate for creation long-term data carrier was proposed. Microrelief information record on the glass substrate surface was obtained using the ionbeam etching.

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