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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System 
    Moskvin, P.P.; Rashkovetsky, L.V.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence ...
  • Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate 
    Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ...
  • Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the current creation accompanied by the water decomposition H₂O → OH + H caused by various catalytically active electrodes with different electrochemical potentials, both without external electric ...
  • Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures 
    Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It ...
  • Information conception of image perception at solid-state lighting 
    Osinsky, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An information-technological approach to the development of integral white light sources is introduced. It is based on the technology of epitaxial growth of nanostructures in multicomponent solid-state solutions of A³B⁵ ...
  • Investigation of electron-phonon interaction in bulk and nanostructured semiconductors 
    Yaremko, A.M.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Azhniuk, Yu.M.; Baran, J.; Ratajczak, H.; Drozd, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be ...
  • Investigation of light polarization in CdS in the presence of two-photon absorption 
    Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is shown that, under the two-photon absorption in CdS, the increase in the azimuth of polarization causes a smooth change of the large semi-axis angle rotation, ellipticity, focal parameter, and eccentricity of the ...
  • Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field 
    Lev, S.B.; Sugakov, V.I.; Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The energy levels, wave functions, and lifetimes of direct and indirect excitons in a CdTe-based double quantum well system with non-magnetic (Mg) and magnetic (Mn) ions in a magnetic field are found. It is shown that, ...
  • Isothermal growth kinetics of CdxHg₁₋xTe LPE layers 
    Moskvin, P.P.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations ...
  • Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization 
    Rulik, Ju.Ju.; Mikhailenko, N.M.; Zelensky, S.E.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Non-linear properties and the kinetics of laser-induced incandescence in aqueous carbon black suspensions are investigated. For explanation of the observed properties, a model, which takes into account a decrease of the ...
  • Local properties of impurity and defects investigated by high pressure spectroscopy 
    Grinberg, Marek (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ...
  • Luminescence of the pyrazoline dye in nanostructured zeolite matriх 
    Beliak, I.V.; Kravets, V.G.; Kryuchin, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A physicotechnical fundamental of the multilayer photoluminescent media development has been considered. The quantum yield and relaxation time of luminescence were found as most significant values of the recording material. ...
  • Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures 
    Sachenko, A.V.; Sokolovskyi, I.O.; Kazakevitch, A.; Shkrebtii, A.I.; Gaspari, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in ...
  • Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields 
    Syngaivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under ...
  • Obtaining and optical properties of the glasses of the GeS₂–HgS system 
    Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses 
    Shpotyuk, O.I.; Vakiv, M.M.; Butkiewicz, B.; Kovalskiy, A.P.; Golovchak, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As₂S₃-GeS₂ and non-stoichiometric As₂S₃-Ge₂S₃ systems. A ...
  • Optical investigation of the electronic structure of alloys Сu-Fе 
    Vovchenko, V.V.; Staschuk, V.S.; Poperenko, L.V.; Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigate the optical properties of Cu-Fe alloys in a wide interval of concentrations (7.5–30 at. %) and in a wide spectral interval (0.25–7 µm). An additional absorption associated with interband electron transitions ...
  • Organic iso-type pentacene – lead phthalocyanine heterostructures 
    Vertsimakha, Ya.I.; Lutsyk, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown ...

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