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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • Qualitative analysis of electron states in nanoobjects 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Tendencies of change of the electron energy states at transition from a “rigid” nanoobject to a nanoobject, in which taken into account is the influence of medium on it, are considered. Proposed is the model describing the ...
  • Radiative recombination of the PVK/C60 molecular complexes with the radiation damages 
    Коbus, E.S.; Dmytrenko, O.P.; Kulish, N.P.; Prylutskyy, Yu.I.; Belyy, N.M.; Syromyatnikov, V.G.; Studzinskyy, S.L.; Zabolotnyy, M.A.; Gryn'ko, D.A.; Shchur, D.V.; Shlapatskaya, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The relaxation processes of electronic excitations in the films composed from a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes (PVC/C₆₀) with different contents of nanocluster molecules ...
  • Simulation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures 
    Kosobutskyy, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The method to obtain analytical expressions for envelope functions in spectra of normal incidence light reflection and transmission by single-layer structures is proposed
  • Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure 
    Grushko, E.V.; Maslyanchuk, O.L.; Mathew, X.; Motushchuk, V.V.; Kosyachenko, L.A.; Streltsov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe ...
  • Spin polarization in semimagnetic semiconductor two barrier spin filters 
    Lev, S.B.; Sugakov, V.I.; Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic ...
  • Template-based growth of TiO₂ nanorods by sol-gel process 
    Sadeghzadeh-Attar, A.; Sasani Ghamsari, M.; Hajiesmaeilbaigi, F.; Mirdamadi, Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the preparation of TiO2 nanorods by sol-gel-template process has been considered. The prepared sols were characterized by using FTIR spectroscopy, and the obtained nanorods were characterized by X-ray ...
  • The current density order based on the Ginzburg-Landau description 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties 
    Horvat, G.T.; Kondratenko, O.S.; Loja, V.Ju.; Myholynets, I.M.; Rosola, I.J.; Jurkovуch, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure ...
  • The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film 
    Abbasov, Sh.M.; Nuruyev, I.R.; Tagiyev, T.B.; Agaverdiyeva, G.T.; Kerimova, T.I.; Ismayilova, G.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the ...
  • The influence of size effects on thin films local piezoelectric response of thin films 
    Morozovska, A.N.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We discuss the influence of size effects on the local piezoelectric response of thin films. In calculations of the electrostatic potential in the triple system “PFM probe tip – film – substrate,” the effective point ...
  • The radiation hardness of pulled silicon doped with germanium 
    Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...
  • Thermofield Cr→Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures 
    Vlasenko, N.A.; Oleksenko, P.F.; Denisova, Z.L.; Mukhlyo, M.A.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, an anomalous strong increase of the Cr²⁺ emission intensity (I) with increasing the applied voltage (V) has been discovered in ZnS:Cr thin-film electroluminescent structures (TFELS) instead of the ...
  • The role of multicomponent surface diffusion in growth and doping of silicon nanowires 
    Efremov, A.; Klimovskaya, A.; Hourlier, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events ...
  • Using ion beams for creation of nanostructures on the surface of high-stable materials 
    Gorbov, I.V.; Petrov, V.V.; Kryuchyn, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface ...

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