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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Acoustic-emission method for controlling the defect-formation process in light-emitting structures 
    Lyashenko, O.V.; Vlasenko, A.I.; Veleschuk, V.P.; Kisseluk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence ...
  • Calculated images of dislocations in crystals on section topograms 
    Novіkov, S.M.; Fodchuk, І.M.; Fedortsov, D.G.; Struk, A.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations ...
  • Defect reorganization induced by pulsed magnetic field in porous InP 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution 
    Fodchuk, I.; Balovsyak, S.; Borcha, M.; Garabazhiv, Ya.; Tkach, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been suggested the technique based on analysis of geometry and intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering diffraction for defining structural imperfection of diamond ...
  • Effect of strong magnetic field on surface polaritons in ZnO 
    Venger, E.F.; Ievtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the attenuated total reflectance technique, we studied the effect of strong uniform magnetic field H on the main properties of surface polaritons in ZnO single crystals. The used orientations were C || y , k ⊥ C , ...
  • Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch 
    Elkadadra, A.; Abouelaoualim, D.; Oueriagli, A.; Outzourhit, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined ...
  • Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal 
    Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • Increase of data protection level for visual information in control systems 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Formalized description of data transmission between technical means and an operator from the viewpoint of information security is presented. The most widely used symbolic and bar graph data representation forms are ...
  • Low voltage FLC for fast active matrix displays 
    Andreev, A.; Andreeva, T.; Kompanets, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The process of FLC director reorientation in alternating electric field is considered for the case when interaction of FLC molecules with the substrates results in partial unwinding the helix structure and motion of ...
  • New dyes for guest-host mode 
    Muravsky, A.; Agabekov, V.; Ariko, N.; Shachab, S.; Tolstik, A.; Malashko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    New guest-host dyes of red and purple colour suitable for fabrication of ultrathin film polarizer from polymerizable liquid crystals are developed. When the absorption spectrum of dye matches the photopic curve, samples ...
  • Optical properties and structure of As-Ge-Se thin films 
    Tolmachov, I.D.; Stronski, A.V.; Vlcek, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk ...
  • Optical properties of thin films of titanium with transient layers on them 
    Lendel, V.V.; Lomakina, O.V.; Mel’nychenko, L.Yu.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Within the Beattie spectroellipsometric method, we measured the ellipsometric parameters of thin Ті films deposited onto glass substrates by magnetron sputtering in argon atmosphere. Measurements were carried out at five ...
  • Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells 
    Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data on degradation of photovoltaic and photoenergetic characteristics of silicon solar cells exposed by high-energy electrons and protons as well as low-energy protons have been obtained. The previously ...
  • Phase maps for networks of polycrystalline human biological liquids: Statistical and fractal analyses 
    Ushenko, Yu.O.; Istratiy, V.V.; Balanets’ka, V.O.; Kvasniyk, D.O.; Bachinsky, V.T.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Performed in this work are complex statistical and fractal analyses of phase properties inherent to birefringence networks of liquid crystals consisting of opticallythin layers prepared from synovial fluid taken from ...
  • Polarization-singular structure in laser images of phase-inhomogeneous layers to diagnose and classify their optical properties 
    Ushenko, Yu.O.; Misevich, I.Z.; Angelsky, A.P.; Bachinsky, V.T.; Telen’ga, O.Yu.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Adduced in this work are the results of investigation aimed at analysis of coordinate distributions for azimuths and ellipticity of polarization (polarization maps) in laser images of three types of phase-inhomogeneous ...
  • Raman spectroscopy of the laser irradiated titanium dioxide 
    Strelchuk, V.V; Budzulyak, S.I.; Budzulyak, I.M; Ilnytsyy, R.V.; Kotsyubynskyy, V.O.; Segin, M.Ya.; Yablon, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Evolution of anatase phase for the TiO₂ nanocrystals at their laser irradiation is researched by the method of combinational light dispersion. The observed changes of intensity, frequency and halfwidth of TiO₂ phonon ...
  • Relaxation process features of photoconductivity in p-i-n structures 
    Mumimov, R.A.; Kanyazov, Sh.K.; Saymbetov, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of ...
  • Scattering and birefringence properties of polymeric films modified with nanoparticles of different nature 
    Agabekov, V.E.; Ivanova, N.A.; Kosmacheva, T.G.; Dlugunovich, V.A.; Tsaruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Scattering properties of directed polyvinyl alcohol films modified with titanium dioxide or silver nanoparticles and illuminated by a 0.63 μm linear polarized He-Ne laser radiation were investigated. Ability of the ...
  • Self-organized nanostructured anodic oxides for display applications 
    Jaguiro, P.; Stsiapanau, A.; Hubarevich, A.; Mukha, Y.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Electrochemical technologies have a high potential for display applications because of their cheapness and simplicity, easiness to scaling to large substrates and lowtemperature nature. However, in major display technologies ...
  • Sponge-like nanostructured silicon for integrated emitters 
    Hubarevich, A.; Jaguiro, P.; Mukha, Y.; Smirnov, A.; Solovjov, Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. ...

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