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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices 
    Gavrysh, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for ...
  • Optimized calibration of cryogenic silicon thermodiodes 
    Ivashchenko, O.M.; Shwarts, Yu.M.; Shwarts, M.M.; Kopko, D.P.; Sypko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this paper is the efficiency of smoothing cubic spline approximation aimed at optimization of calibration of cryogenic silicon diode thermometers (SDTs). The proposed algorithm allows to significantly reduce ...
  • Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities 
    Ignatyeva, Т.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration ...
  • Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix 
    Kobeleva, O.I.; Valova, T.M.; Ait, A.O.; Barachevsky, V.A.; Grytsenko, K.P.; Machulin, V.F.; Krayushkin, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Photochromic polymeric thin films have been prepared by vacuum codeposition of polytetrafluoroethylene (PTFE) and thermally irreversible photochromic compounds: the cyclopentene derivative of diarylethene and fulgimide. ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field 
    Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...

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