Посилання:Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.
Підтримка:This work is the part of the project “Development and
fabrication of a diagnostic complex for testing of
microwave diodes based on wide-gap semiconductors
(2008-2012)” and project No 31/4.2.3.1/1833
“Development of methods of investigation of contact
systems for high-power light-emitting diodes using III
group trinitride heterostructures”.
Some aspects of measuring the thermal resistance to a constant heat flow at a
p-n junction–package region in IMPATT and light-emitting diodes are considered. We
propose a method of studying the thermal resistance of high-power light-emitting diodes.
This method makes it possible to increase accuracy of measuring the thermal resistance
by determining the temperature at a linear section of the voltage−temperature curve. A
possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V
curves is shown. This enables one to simplify calculations and increase accuracy of
measuring the thermal resistance.