Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for
different values of fluence with using P+
ions; the energy of ions was 150 keV. For the
implanted Cu₆PS₅X crystals, the structural studies were ...