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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Сортувати за: Порядок: Результатів:

  • Negative magnetoresistance of heavily doped silicon p-n junction 
    Borblik, V.L.; Rudnev, I.A.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant ...
  • Non-ohmic conduction in tin dioxide based ceramics with copper addition 
    Gaponov, A.V.; Glot, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The current-voltage characteristics and temperature dependences of electrical conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these ...
  • On Raman spectra of water, its structure and dependence on temperature 
    Baschenko, S.M.; Marchenko, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Raman spectra of water within the temperature range 20 to 3 C were investigated. Best of all, the complex shape of the obtained spectra was approximated by four (or five) Gaussian-shaped peaks with their positions 3070, ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical properties of ion implanted thin Ni films on lithium niobate 
    Lysiuk, V.O.; Staschuk, V.S.; Androsyuk, I.G.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Ion implantation by keV Ar⁺ ions creates blisters on the surface of thin Ni films deposited on lithium niobate and causes changes in optical properties and structure of Ni film and lithium niobate substrate. Processes of ...
  • Optical properties of the Ti surface structured by femtosecond laser beam 
    Dolgov, L.; Kravchuk, R.; Rybak, A.; Kiisk, V.; Sildos, I.; Blonskyi, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Wavelength-scaled periodic ripples formed on the Ti surface under the action of femtosecond laser irradiation have been investigated. The ripples were oriented in parallel to the incident light polarization. After initial ...
  • Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current 
    Elgomati, H.A.; Ahmad, I.; Salehuddin, F.; Hamid, F.A.; Zaharim, A.; Majlis, B.Y.; Apte, P.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The objective of this paper is to optimize the process parameters of 32-nm CMOS process to get minimum leakage current. Four process parameters were chosen, namely: (i) source-drain implantation, (ii) source-drain ...
  • Optimized calibration of cryogenic silicon thermodiodes 
    Ivashchenko, O.M.; Shwarts, Yu.M.; Shwarts, M.M.; Kopko, D.P.; Sypko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this paper is the efficiency of smoothing cubic spline approximation aimed at optimization of calibration of cryogenic silicon diode thermometers (SDTs). The proposed algorithm allows to significantly reduce ...
  • Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities 
    Ignatyeva, Т.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration ...
  • Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix 
    Kobeleva, O.I.; Valova, T.M.; Ait, A.O.; Barachevsky, V.A.; Grytsenko, K.P.; Machulin, V.F.; Krayushkin, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Photochromic polymeric thin films have been prepared by vacuum codeposition of polytetrafluoroethylene (PTFE) and thermally irreversible photochromic compounds: the cyclopentene derivative of diarylethene and fulgimide. ...
  • Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals 
    Taghiyev, T.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it ...
  • Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂) 
    Akinlami, J.O.; Awobode, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Here we report the electronic structure of praseodymium filled skutterudite compound PrOs₄Sb₁₂. The theoretical photoemission spectrum (PES) at ћω = 21.2 eV shows four distinct structures peaking at about –0.2, –7.7, –13.7 ...
  • Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation 
    Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules 
    Dvoynenko, M.M.; Kazantseva, Z.I.; Strelchuk, V.V.; Kolomys, O.F.; Bortshagovsky, E.G.; Venger, E.F.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The simultaneous measurement of Raman and fluorescence signals was proposed to find out the molecule-metal distance. The ratio between Raman and fluorescence intensities was used to estimate molecule-metal distance in ...
  • Role of Sb additive in the dielectric properties of f Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys 
    Sharma, J.; Kumar, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this paper, we report the effect of Sb additive on dielectric properties of two binary − InSe glassy systems, comparing the properties of a- Se₉₀In₁₀ a- Se₇₅In₂₅ and a Se₇₅In₂₅Sb₁₅ glassy alloys. The temperature and ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Sensors for fire gas detectors 
    Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...

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