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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Perspectives for using technology of laser thermolithography 
    Kryuchyn, A.A.; Lapchuk, A.S.; Bryts’kyi, A.I.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Analyzed in this work are the requirements to an optical system for laser thermolithographic recording. It has been shown that possibilities of this type recording with decreasing the registered element sizes can be ...
  • Photoluminescence studies of CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Stariy, S.V.; Boiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films ...
  • Photostimulated etching of germanium chalcogenide films 
    Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...
  • Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates 
    Makhniy, V.P.; Slyotov, М.М.; Tkachenko, I.V.; Slyotov, А.М. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
  • Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements 
    Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
  • Spectral-ellipsometric examining the films of gold nanoparticles on Si/SiO₂ substrate 
    Bortchagovsky, E.G.; Lozovski, V.Z.; Mishakova, T.O.; Hingerl, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We have investigated optical properties of films of gold nanoparticles on Si/SiO₂ substrate by using the method of spectroscopic ellipsometry in dependence on morphology of the films. Different morphology of the films ...
  • Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon 
    Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...
  • X-ray dosimetry of copper-doped CdGa₂S₄ single crystals 
    Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...

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