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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Kossko, I.A.; Denisov, A.Ye. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) ...
  • Gorbov, I.V.; Kryuchyn, A.A.; Grytsenko, K.P.; Manko, D.Yu.; Borodin, Yu.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Pits 250 – 300 - nm wide were obtained on the surface of thin organic nanocomposite film using master-disc laser-burning station with 405 nm laser beam focused by 0.85 NA lens. The film with obtained pits was used as a ...
  • Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), ...
  • Vuichyk, M.V.; Tsybrii, Z.F.; Lavoryk, S.R.; Svezhentsova, K.V.; Virt, I.S.; Chizhov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The morphological properties of the surface and optical characteristics of nanocomposite ZnO:Co structures grown on substrates of monocrystalline silicon and sapphire by pulsed laser deposition (PLD) method have been ...
  • Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics ...
  • Rubish, V.M.; Stefanovich, V.O.; Maryan, V.M.; Mykaylo, O.A.; Shtets, P.P.; Kaynts, D.I.; Yurkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these ...
  • Fediv, V.I.; Rudko, G.Yu.; Savchuk, A.I.; Gule, E.G.; Davydenko, I.S.; Olar, O.I.; Volkov, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Colloidal CdS:Mn nanoparticles were synthesized in water solutions of the polymer polyvinyl-pyrrolidone (PVP), the surfactant cetyl-trimethyl-ammonium bromide (CTAB) and the mixture of PVP and CTAB. The sizes of nanoparticles ...

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