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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Сортувати за: Порядок: Результатів:

  • Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Olikh, Ya.M.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence ...
  • Analysis of the silicon solar cells efficiency. Type of doping and level optimization 
    Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
  • Carbon ceramics from plants: Graphitization of biomorphic matrixes 
    Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
  • Classic Ronchi test and its variants for quality control of various optical surfaces 
    Malenko, A.S.; Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performed in this work is the analysis of the optical Ronchi interferometer circuit and its upgrading to test quality of various optical surfaces. Briefly described in this paper is the classic test by Ronchi, shown is ...
  • Comparison of the synthesis routes for the ZnO/porous silica nanocomposite 
    Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    ZnO/porous silica nanocomposites were successfully fabricated by three different types of synthesis techniques. In all cases, the molecular sieve SBA-16 was used as a porous matrix. The in situ growth the nanoparticles of ...
  • Compositional studies of optical parameters in (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films 
    Studenyak, I.P.; Kranjčec, M.; Kutsyk, M.M.; Pal, Yu.O.; Neimet, Yu.Yu.; Izai, V.Yu.; Makauz, I.I.; Cserhati, C.; Kökényesi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films were deposited onto a silica substrate by rapid thermal evaporation. The amount of Ag-rich crystalline phase precipitates on the surfaces of the films increases with ...
  • Degradation processes in LED modules 
    Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern 
    Sizov, F.F.; Tsybrii, Z.F.; Zabudsky, V.V.; Sakhno, M.V.; Shevchik-Shekera, A.V.; Dukhnin, S.Ye.; Golenkov, A.G.; Dieguez, E.; Dvoretsky, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas ...
  • Dielectric spectroscopy of CuInSe₂ single crystals 
    Mustafaeva, S.N.; Asadov, S.M.; Guseinov, D.T.; Kasimoglu, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The results of high-frequency dielectric measurements with obtained α-CuInSe₂ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density ...
  • Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties 
    Bortchagovsky, E.G.; Vasin, A.V.; Lytvyn, P.M.; Tiagulskyi, S.I.; Slobodian, A.M.; Verovsky, I.N.; Strelchuk, V.V.; Stubrov, Yu.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that ...
  • Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy 
    Ponomaryov, S.S.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local ...
  • Electrical and optical parameters of Cu₆PS₅I-based thin films deposited using magnetron sputtering 
    Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
  • Electrical properties of InSb p-n junctions prepared by diffusion methods 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
  • Electronic structure of 2H-SnSe₂: ab initio modeling and comparison with experiment 
    Bletskan, D.I.; Glukhov, K.E.; Frolova, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Energy band structure, total and local partial densities of states, spatial distribution of electronic density of 2H-SnSe₂ have been calculated using the densitym functional theory method in LDA and LDA+U approximations ...
  • Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals 
    Bratus, O.L.; Evtukh, A.A.; Steblova, O.V.; Prokopchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the ...
  • Enhanced optical transmission of the triple-layer resonant waveguide structure 
    Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, we propose and demonstrate a novel guided-mode resonant filter based on a metallic grating sandwiched between two dielectric layers for TE polarization. A theoretical model based on rigorous coupled wave ...
  • Features of tensoresistance in single crystals of germanium and silicon with different dopants 
    Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
  • Formation of nanostructured state in LaBGeO₅ monolithic glass using pulsed magnetic fields 
    Doroshkevich, A.S.; Shylo, A.V.; Volkova, G.K.; Glazunova, V.A.; Perekrestova, L.D.; Lyubchik, S.B.; Konstantinova, T.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Using the methods of transmission electron microscopy, X-ray structure analysis and thermal differential analysis, it has been discovered that the pulsed magnetic field (PMF) intensifies homogeneous crystallization in ...
  • How the phosphorus chains impact on the vibrational properties of diphosphides ZnP₂ and CdP₂ at low temperatures 
    Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The temperature dependence of the vibrational modes in the diphosphides ZnP₂ and CdP₂ has been studied by employing IR reflectance spectroscopy within the 4…300 K temperature range in the polarized radiation. It has been ...
  • Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface 
    Sologub, S.V.; Bordenyuk, I.V.; Kanash, O.V.; Amirov, R.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of ...

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