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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за датою випуску

Сортувати за: Порядок: Результатів:

  • Romanets, P.M.; Belyaev, A.E.; Sachenko, А.V.; Boltovets, N.S.; Basanets, V.V.; Konakova, R.V.; Slipokurov, V.S.; Khodin, А.А.; Pilipenko, V.А.; Shynkarenko, V.V.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of ...
  • Studenyak, I.P.; Kranjčec, M.; Kutsyk, M.M.; Pal, Yu.O.; Neimet, Yu.Yu.; Izai, V.Yu.; Makauz, I.I.; Cserhati, C.; Kökényesi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films were deposited onto a silica substrate by rapid thermal evaporation. The amount of Ag-rich crystalline phase precipitates on the surfaces of the films increases with ...
  • Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
  • Kulish, M.R.; Litvinova, V.M.; Malysh, M.I.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial ...
  • Iliash, S.A.; Kondratenko, S.V.; Yakovliev, A.S.; Kunets, Vas.P.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within ...
  • Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
  • Kotov, M.M.; Kurashov, V.N.; Goloborodko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The dependences of statistical parameters inherent to speckle patterns on the object roughness and aperture size have been investigated. The experimental results that confirm theoretical dependence quality within the limits ...
  • Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of the sensitive element fabrication technology and noise performance of surface plasmon resonance (SPR) immunosensor on sensitivity and stability of operation inherent to the “Plasmon” series instrument has ...
  • Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
  • Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
  • Grytsenko, K.P.; Kolomzarov, Yu.V.; Belyaev, O.E.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper summarizes in brief applications of perfluoropolymer thin films deposited from the gas phase by several different methods, for protection of various materials and devices both at the research stage and already ...
  • Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, we propose and demonstrate a novel guided-mode resonant filter based on a metallic grating sandwiched between two dielectric layers for TE polarization. A theoretical model based on rigorous coupled wave ...
  • Makhnovets, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We show that a nanoparticle with a “giant” polarizability α (i.e., with the polarizability volume α′ = α/4πε₀ significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased ...
  • Studenyak, I.P.; Kutsyk, M.M.; Studenyak, V.I.; Bendak, A.V.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM ...
  • Rusinchuk, N.M.; Lozovski, V.Z.; Shydlovska, O.A.; Zholobak, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possible method for evaluation of virus, bacteria and yeasts infectivity based on study of their absorption spectra has been proposed. The decrease in the samples infectivity was caused by adding the CeO₂ nanoparticles. ...
  • Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
  • Kuryptya, Ya.A.; Savchenko, B.M.; Kovalchuk, O.V.; Kovalchuk, T.M.; Shostak, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By using the oscilloscope method within the frequency range 10 to 10⁶ Hz at the temperature 492.1 K and pressure 11.31 MPa at the output of the single-screw extruder, the dielectric properties of the composite melt – linear ...
  • Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The temperature dependence of the vibrational modes in the diphosphides ZnP₂ and CdP₂ has been studied by employing IR reflectance spectroscopy within the 4…300 K temperature range in the polarized radiation. It has been ...
  • Boichuk, V.I.; Leshko, R.Ya.; Holskyi, V.B.; Karpyn, D.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Determined in this work is the energy of surface states related with polarization charges at the interfaces. This energy was compared with that of electron internal states. Dipole momentum matrix elements of the interlevel ...
  • Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...

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