Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3
→
Переглянути статтю

Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch

Elkadadra, A. ; Abouelaoualim, D. ; Oueriagli, A. ; Outzourhit, A.

Інший ID: PACS 42.65.Ky, 85.60.-q, 07.05.Tp

URI: http://dspace.nbuv.gov.ua/handle/123456789/118393

Посилання: Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ.

Дата: 2010

Завантажень: 332

Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch

Анотація:

he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined wave functions and energies of electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov’s method using the second and fourth order approximations for the derivatives. The numerical results for typical GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in electric field by choosing some optimized structural parameters.

Показати повний запис статті