Показати простий запис статті
dc.contributor.author |
Elkadadra, A. |
|
dc.contributor.author |
Abouelaoualim, D. |
|
dc.contributor.author |
Oueriagli, A. |
|
dc.contributor.author |
Outzourhit, A. |
|
dc.date.accessioned |
2017-05-30T06:50:48Z |
|
dc.date.available |
2017-05-30T06:50:48Z |
|
dc.date.issued |
2010 |
|
dc.identifier.citation |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 42.65.Ky, 85.60.-q, 07.05.Tp |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118393 |
|
dc.description.abstract |
he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
nitride with single quantum wells has been theoretically investigated in the framework of
the compact-density-matrix approach. The confined wave functions and energies of
electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation,
solving the Schrödinger equation by Numerov’s method using the second and fourth
order approximations for the derivatives. The numerical results for typical
GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in
electric field by choosing some optimized structural parameters. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті