Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
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Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses

Інший ID: PACS 61.43.Fs

URI: http://dspace.nbuv.gov.ua/handle/123456789/117682

Посилання: Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ.

Підтримка: The author would like to thank Prof. Volodymyr Tsmots (Drohobych Ivan Franko State Pedagogical University) for stimulating discussions. This work is supported in part by the State Fund for Fundamental Researches of Ukraine (project #F40.2/019).

Дата: 2013

Завантажень: 327

Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses

Анотація:

Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy.

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