Перегляд за автором "Makhniy, V.P."

Сортувати за: Порядок: Результатів:

  • Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Gryvul, V.I.; Makhniy, V.P.; Tkachenko, I.V. (Functional Materials, 2007)
    Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to ...
  • Gorley, P.M.; Prokopenko, I.V.; Grushka, Z.M.; Makhniy, V.P.; Grushka, O.G.; Chervinsky, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current ...
  • Makhniy, V.P.; Boiko, Yu.N.; Skrypnyk, N.V.; Slyotov, M.M.; Khusnutdinov, S.V. (Functional Materials, 2009)
    Formation of CdO and ZnO heterolayers on cadmium and zinc chalcogenide substrates by oxidation and effect of the formation method on physical properties of the oxides are discussed.
  • Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...
  • Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Makhniy, V.P.; Skrypnyk, N.V.; Boyko, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Analyzed in this paper is the influence of various modifications of substrate surface in n-CdTe single crystals (laser, thermal and photothermal) on electric and photoelectric properties of diode structures based on them.
  • Makhniy, V.P.; Slyotov, М.М.; Tkachenko, I.V.; Slyotov, А.М. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.