Перегляд за автором "Litovchenko, P.G."

Сортувати за: Порядок: Результатів:

  • Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects 
    Dubovyi, V.K.; Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ya.; Tartachnik, V.P. (Functional Materials, 2005)
    The GaP diode radiation-induced degradation has been established to be caused mainlу bу the reduction of the current carrier lifetime resulting from introduction of non-radiative deep levels of the radiation-induced defects. ...
  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons 
    Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
  • Influence of neutron irradiation on elctrooptical and structural properties of silicon 
    Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide 
    Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...
  • Influence of structural defects on photoconductivity of zinc diphosphide 
    Kudin, A.P.; Kuts, V.I.; Litovchenko, P.G.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects ...
  • Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance 
    Baranskyy, P.I.; Gaydar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, ...
  • Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors 
    Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2016)
    In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals ...
  • Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers 
    Litovchenko, P.G.; Pavlovska, N.T.; Pavlovskyy, Yu.V.; Ugrin, Yu.O.; Luka, G.; Ostrovskyy, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. ...
  • Nuclear irradiation-induced superconductivity in the binary semiconductor InAs 
    Kаrpenko, А.Ya.; Litovchenko, P.G.; Shevtsova, О.N.; Sugakov, V.I.; Vikhlii, G.A. (Физика низких температур, 2003)
    A jump-like increase of the resistance as a function of magnetic field is observed in indium arsenide samples irradiated by a particles with an energy of 80 MeV. The effect is detected at T < 5 K. The observed effect is ...
  • Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon 
    Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2017)
    On the basis of experimental studies the surface-barrier technology for fabrication of sectional nuclear radiation detectors with using of the high-resistance n-Si plates of large diameter (~ 100 mm) was optimized. The ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Semiconductor sensors for dosimetry of epithermal neutrons 
    Litovchenko, P.G.; Moss, R.; Stecher-Rasmussen, F.; Appelman, K.; Barabash, L.I.; Kibkalo, T.I.; Lastovetsky, V.F.; Litovchenko, A.P.; Pinkovska, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes ...
  • Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics 
    Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ja.; Tartachnyk, V.P.; Pinkovs'ka, M.B.; Shakhov, O.P.; Shapar, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect ...
  • The kinetic of point defect transformation during the annealing process in electron-irradiated silicon 
    Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with ...
  • The radiation hardness of pulled silicon doped with germanium 
    Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...