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  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrical and thermal conductivity of graphite-metal composites 
    Stelmakh, O.I.; Vovchenko, L.L.; Matzui, V.I. (Functional Materials, 2004)
    Electrical and thermal conductivity of graphite-Co(Ni) composites on the basis of two different types of thermoexfoliated graphite, TEG(1) and TEG(2) have been studied. The distinctions in electric resistivity (pD) between ...
  • Electrical charging of helium and hydrogen droplets 
    Tito E. Huber; Frank Boccuzi (Физика низких температур, 1998)
  • Electrical conductivity of solid solution of Co(II)-Zn dihydrophosphate and its thermolysis products 
    Antraptseva, N.M.; Solod, N.V.; Povshuk, V.A. (Functional Materials, 2015)
    Dependence of the specific electrical conductivity value of the solid solution with composition Co₁-xZnx(H₂PO₄)₂•H₂O(0 < x < 1.0) and products of its partial or complete dehydration from temperature and duration of heat ...
  • Electrical connectors for surface solderless mounting 
    Yefimenko, A.A. (Технология и конструирование в электронной аппаратуре, 2012)
    The article describes the features of development, possibilities of manufacture and application of electrical connectors for surface mounting with flexible printed cables and elastomer liners. With regard to characteristics, ...
  • Electrical effects in superfluid helium. I. Thermoelectric effect in einstein's capacitor 
    Ledenyov, D.O.; Ledenyov, V.O.; Ledenyov, O.P. (Вопросы атомной науки и техники, 2014)
    The Einstein's ideas about the thermodynamical fluctuational nature of some electrical phenomena and the difference of electrical potentials U in a capacitor at temperature T were proposed in 1906-1907. On base of these ...
  • Electrically active magnetic excitations in antiferromagnets (Review Article) 
    Krivoruchko, V.N. (Физика низких температур, 2012)
    The magnetic resonance operation by electric field is highly nontrivial but the most demanding function in the future spin-electronics. Recently observed in a variety of multiferroics materials named the collective ...
  • Electrically induced spectral and spatial instabilities of photoresponse CdZnTe crystals 
    Mygal, V.P.; Phomin, A.S. (Functional Materials, 2006)
    The features of I = f(λ) and I = f(x) dependences in Cd₁-ₓZnₓТе crystals containing a variety of two-dimensional structural defects, which become manifested under simultaneous action of biasing and modulating fields, ...
  • Electrically switchable, Ka-band slotted waveguide antenna array system 
    Sekretarov, S.S.; Vavriv, D.M.; Volkov, V.A.; Natarov, M.P.; Glamazdin, V.V. (2008)
    An original electrically switchable, Ka-band slotted waveguide antenna array system has been recently developed, produced, and tested. The system consists of four identical sections, which are connected to a radar ...
  • Electrical properties and mechanisms of the point defect formation in PbTe(In) films prepared by modified "hot wall" technique 
    Samoylov, A.M.; Agapov, B.L.; Belenko, S.V.; Dolgopolova, E.A.; Khoviv, A.M. (Functional Materials, 2011)
  • Electrical properties of fast cooled inse single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Electrical properties of fast cooled InSe single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Electrical properties of gamma-modified composites copolymer of polyvinylidene fluoride with tetrafluoroethylene and silicon 
    Nuruyev, I.M. (Вопросы атомной науки и техники, 2019)
    The concentration and temperature dependences of the electrical properties of the composites obtained on the basis of a copolymer of polyvinylidene fluoride with tetrafluoroethylene P(VDF–TFE) with silicon nano- and ...
  • Electrical properties of InSb p-n junctions prepared by diffusion methods 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
  • Electrical properties of macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures ...
  • Electrical properties of MIS structures with silicon nanoclusters 
    Bunak, S.V.; Ilchenko, V.V.; Melnik, V.P.; Hatsevych, I.M.; Romanyuk, B.N.; Shkavro, A.G.; Tretyak, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally ...
  • Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure 
    Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. ...
  • Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe 
    Tkachuk, I.G.; Orletsky, I.G.; Kovalyuk, Z.D.; Marianchuk, P.D. (Functional Materials, 2018)
    Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of ...
  • Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 
    Bunak, S.V.; Buyanin, A.A.; Ilchenko, V.V.; Marin, V.V.; Melnik, V.P.; Khacevich, I.M.; Tretyak, O.V.; Shkavro, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth ...
  • Electrical properties of ZrO₂ in nano- and polycrystalline states at high pressure 
    Korionov, I.V.; Trefilova, A.N.; Babushkin, A.N.; Korionova, I.G.; Shumina, U.N.; Lojkowski, W.; Opalinska, A. (Физика и техника высоких давлений, 2007)
    We present the results of the research work devoted to the problem: how the crystallites influence the electrical properties of stabilized zirconia at pressures of 22−50 GPa and in the temperature range of 77−450 K. The ...