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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Makhniy, V.P."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Makhniy, V.P."

Сортувати за: Порядок: Результатів:

  • Current flow mechanisms in p-i-n­ structures based on cadmium telluride 
    Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Direct current transport mechanisms in n-InSe/p-CdTe heterostructure 
    Gorley, P.M.; Prokopenko, I.V.; Grushka, Z.M.; Makhniy, V.P.; Grushka, O.G.; Chervinsky, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current ...
  • Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals 
    Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures 
    Makhniy, V.P.; Skrypnyk, N.V.; Boyko, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Analyzed in this paper is the influence of various modifications of substrate surface in n-CdTe single crystals (laser, thermal and photothermal) on electric and photoelectric properties of diode structures based on them.
  • Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates 
    Makhniy, V.P.; Slyotov, М.М.; Tkachenko, I.V.; Slyotov, А.М. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.

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