Elgomati, H.A.; Ahmad, I.; Salehuddin, F.; Hamid, F.A.; Zaharim, A.; Majlis, B.Y.; Apte, P.R.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
The objective of this paper is to optimize the process parameters of 32-nm
CMOS process to get minimum leakage current. Four process parameters were chosen,
namely: (i) source-drain implantation, (ii) source-drain ...