Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Holiney, R.Yu."

Результати 1-3 з 3

Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

Gorbach, T.Ya.; Holiney, R.Yu.; Matiyuk, I.M.; Matveeva, L.A.; Svechnikov, S.V.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)

The effect of various pretreatments on the performance of microrelief (textured) Si wafers was studied by the techniques of low-field electroreflectance spectroscopy, scanning electron microscopy, and electron diffraction. ...
Influence of neutron irradiation on elctrooptical and structural properties of silicon

Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
Investigation of the undersurface damaged layers in silicon wafers

Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...

Результати 1-3 з 3

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