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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Growth conditions influence on thermally stimulated luminescence of sapphire single crystals 
    Blonskyy, I.V.; Vakhnin, A.Yu.; Danko, A.Ya.; Kadashchuk, A.K.; Kadan, V.N.; Sidelnikova, N.S.; Puzikov, V.M.; Skryshevskii, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying ...
  • Growth kinetics of PbS nanocrystals in organo-metallic Langmuir-Blodgett films studied by optical absorption spectroscopy 
    Savin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Formation and growth of lead sulfide nanocrystals in lead stearate Langmuir-Blodgett (LB) films are investigated using the optical absorption spectroscopy method. The kinetics of changes in the concentration of lead ions ...
  • Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal 
    Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • GSO: Ce³⁺ scintillator with a high energy resolution 
    Bondar, V.G.; Gavrilyuk, V.P.; Konevskii, V.S.; Krivonosov, E.V.; Martynov, V.P.; Savvin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It is known that in case of registration of the scintillation light using photomultiplier energy resolution of the scintillation detector can be written as sum of three components, each of them is statistically independent ...
  • Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon 
    Hasanov, H.A.; Murguzov, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is ...
  • Heat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layer 
    Kudryavtsev, A.A.; Michailovskaya, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The influence of a heat flux on the rate of photoenhanced and dark Ag transfer in the lightsensitive thin layer As₂S₃-Ag structure was investigated. It was found that the Ag flux increased when a heat flux had the same ...
  • Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Heterostructure infrared photodiodes 
    Rogalski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, ...
  • Heterostructure ohmic contacts to p-CdTe polycrystalline films 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • High-density data recording via laser thermo-lithography and ion-beam etching 
    Gorbov, I.V.; Kryuchyn, A.A.; Grytsenko, K.P.; Manko, D.Yu.; Borodin, Yu.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Pits 250 – 300 - nm wide were obtained on the surface of thin organic nanocomposite film using master-disc laser-burning station with 405 nm laser beam focused by 0.85 NA lens. The film with obtained pits was used as a ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...
  • High-frequency properties of systems with drifting electrons and polar optical phonons 
    Kukhtaruk, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron ...
  • High-pole LED lighting system 
    Trofimov, Y.V.; Lishik, S.I.; Dolgushin, V.V.; Kernazhytski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Different kinds of design of the 25-meter high-pole LED lighting system with 16 or 9 LED Street Lights “Phoenix” mounted on its crown (corona) have been suggested. The crown consists of two tiers. Some luminaries (8 ...
  • High-power low-frequency current oscillations in germanium samples 
    Pavljuk, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Experimental investigation of high-power low-frequency current oscillations in germanium samples with low injecting contacts is discussed in this article. The results obtained were explained by periodic formation, transport ...
  • High-resistance low-doped GaAs and AlGaAs layers obtained by LPE 
    Krukovsky, S.I.; Zayachuk, D.M.; Rybak, O.V.; Mryhin, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed ...
  • High-speed optical recording in vitreous chalcogenide thin films 
    Kryuchyn, A.A.; Petrov, V.V.; Rubish, V.M.; Lapchuk, A.S.; Kostyukevych, S.O.; Shepeliavyi, P.E.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin films of glassy chalcogenide semiconductor are widely used as recording media in optical data storage. To obtain relief micro- and nanoscale structures on the surface of optical master discs inorganic photoresists ...

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