High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4
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High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix

Strelchuk, V.V. ; Valakh, M.Ya. ; Vuychik, M.V. ; Ivanov, S.V. ; Kop'ev, P.S. ; Shubina, T.V.

Інший ID: PACS: 78.55.Et, 78.66.Hf, 68.66.Hb

URI: http://dspace.nbuv.gov.ua/handle/123456789/121339

Посилання: High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ.

Дата: 2002

Завантажень: 630

High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix

Анотація:

The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties.

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