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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...
  • Vacuum method for creation of liquid crystal orienting microrelief 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A mechanism for creation of microrelief surface anisotropy of amorphous films oxides materials which are obtained by oblique reactive cathode sputtering method is described. The influence of technological parameters of ...
  • Van der Waals interaction between surface and particle with giant polarizability 
    Makhnovets, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We show that a nanoparticle with a “giant” polarizability α (i.e., with the polarizability volume α′ = α/4πε₀ significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased ...
  • Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells 
    Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a ...
  • Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...
  • Vibrational states of hexagonal ZnO doped with Co 
    Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...
  • Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy 
    Rengevych, O.V.; Beketov, G.V.; Ushenin, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The potential of surface plasmon resonance-enhanced total internal reflection microscopy for visualization of submicron particles has been demonstrated using submicron-sized silicon rods as a test object. Submicron Si-rods ...
  • Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions 
    Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...
  • Wannier–Stark electro-optical effect and photonic modes in 2D macroporous silicon structures with SiO₂ nanocoatings 
    Karachevtseva, L.; Goltviansky, Yu.; Kolesnyk, O.; Lytvynenko, O.; Stronska, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have investigated the IR light absorption oscillations in 2D macroporous silicon structures with SiO₂ nanocoatings, taking into account the Wannier–Stark electrooptical effect caused by a strong electric field on the ...
  • Wavelet analysis for Mueller matrix images of biological crystal networks 
    Ushenko, Yu.O.; Tomka, Yu.Ya.; Pridiy, O.G.; Motrich, A.V.; Dubolazov, O.V.; Misevitch, I.Z.; Istratiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Theoretically grounded in this work is the efficiency of using the statistical and fractal analyses for distributions of wavelet coefficients for Mueller-matrix images of biological crystal networks inherent to human ...
  • Wavelet analysis for polarization maps of networks formed by liquid biological crystals in blood plasma: statistical and fractal approaches 
    Bachinsky, V.T.; Ushenko, Yu.O.; Tomka, Yu.Ya.; Dubolazov, O.V.; Balanets’ka, V.O.; Karachevtsev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this paper are the possibilities of local wavelet analysis for polarization-inhomogeneous images inherent to blood plasma of healthy and oncologically ill patients. Determined is the set of statistical, ...
  • Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis 
    Zabolotna, N.I.; Balanetska, V.O.; Telenga, O.Yu.; Ushenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Determined in this work are analytical interrelations between orientations of optical axes and birefringence of biological crystals as well as characteristic values of elements in the Jones matrix for flat layers of ...
  • Weighting method of the Fourier-kinoform synthesis 
    Kuzmenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A new iterative Fourier transform method of synthesis of kinoforms is presented. Two object-depended filters (an amplitude filter and a phase one) are used in the object plane on the iterative calculation of a kinoform ...
  • White LED modules encapsulation features 
    Trofimov, Yu.V.; Posedko, V.S.; Ostretsov, E.F.; Tsvirko, V.I.; Survilo, L.N.; Marus, N.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The behaviour and causes of changes for correlated color temperature (CCT) and radiant spectral power in white LED modules of different design at their encapsulation by optical compounds are investigated. It is shown ...
  • X-ray characterization of ZnSe single crystals doped with Mg 
    Fedorov, A.G.; Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...
  • X-ray dosimetry of copper-doped CdGa₂S₄ single crystals 
    Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...
  • X-ray study of dopant state in highly doped semiconductor single crystals 
    Shul’pina, I.L.; Kyutt, R.N.; Ratnikov, V.V.; Prokhorov, I.A.; Bezbakh, I.Zh.; Shcheglov, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of ...

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