Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...
  • Ultrasound effect on radiation damages in boron implanted silicon 
    Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...
  • Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range 
    Lepikh, Ya.I.; Ivanchenko, I.A.; Budiyanskaya, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled ...
  • Unipolar injection currents in Bi₄Ge₃O₁₂ crystals 
    Bochkova, T.M.; Plyaka, S.N.; Sokolyanskii, G.Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction ...
  • Universal Electro-Optical Hybrid Logic Gates 
    Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    An Electro-Optical Hybrid Logic Gate is defined as a circuit which accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility to develop universal ...
  • Unstable mixing regions in II-VI quaternary solid solutions 
    Deibuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from ...
  • Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption 
    Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...
  • Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals 
    Kunets, V.P.; Kulish, N.R.; Kunets, Vas.P.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We have found that the long wavelength fundamental absorption edge of CdSXSe₁-x nanocrystals grown in an oxide glass follows to the generalized Urbach rule that takes into account both the dynamic (phonon induced) and ...
  • Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts 
    Maslov, V.P.; Kachur, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It is known that the most widely used method to control internal strains is the optical polarization method. However, the sources of polarized radiation are the most problem issue of this method. There are some difficulties ...
  • Using ellipsometry methods for depth analyzing the optical disc data layer relief structures 
    Kravets, V.G.; Gorbov, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We studied the relief depth of the data layer formed in a glass disk by ion beam etching process with using classical ellipsometry at the constant wavelength 632.8 nm for different angles of incidence. It was found that ...
  • Using ion beams for creation of nanostructures on the surface of high-stable materials 
    Gorbov, I.V.; Petrov, V.V.; Kryuchyn, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface ...
  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...
  • Vacuum method for creation of liquid crystal orienting microrelief 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A mechanism for creation of microrelief surface anisotropy of amorphous films oxides materials which are obtained by oblique reactive cathode sputtering method is described. The influence of technological parameters of ...
  • Van der Waals interaction between surface and particle with giant polarizability 
    Makhnovets, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We show that a nanoparticle with a “giant” polarizability α (i.e., with the polarizability volume α′ = α/4πε₀ significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased ...
  • Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells 
    Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a ...
  • Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...
  • Vibrational states of hexagonal ZnO doped with Co 
    Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис