Ultra-high field transport in GaN-based heterostructures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 3
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Ultra-high field transport in GaN-based heterostructures

Vitusevich, S.A. ; Danylyuk, S.V. ; Danilchenko, B.A. ; Klein, N. ; Zelenskyi, S.E. ; Drok, E. ; Avksentyev, A.Yu. ; Sokolov, V.N. ; Kochelap, V.A. ; Belyaev, A.E. ; Petrychuk, M.V. ; Luth, H.

Інший ID: PACS 72.20.Ht, 72.80.Ey, 73.40.-c

URI: http://dspace.nbuv.gov.ua/handle/123456789/121621

Посилання: Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.

Підтримка: The authors would like to thank V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman (Cornell University) for their collaboration in this study. This work is supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (Project Monitor Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (project No. KL 1342/3). The work at Institute of Semiconductor Physics in Kyiv was supported by CRDF Project No. UE2-2439-KV-02 and Institute of Physics by Ukrainian FFR Project F7/379.

Дата: 2006

Завантажень: 418

Ultra-high field transport in GaN-based heterostructures

Анотація:

This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.

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