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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector 
    Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si ...
  • Thin films CdS/CdTe solar cells with different activation processes base layer 
    Khrypunov, G.S.; Shelest, T.N.; Li, T.N.; Meriuts, A.V.; Kovtun, N.A.; Makarov, A.V.; Avksentyeva, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers ...
  • Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness 
    Snopok, B.A.; Lampeka, Ya.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Diffractometric and optical measurements showed that at considerable (>200 oK) difference between sublimation temperature and substrate one dibenzotetraazaannulene forms well oriented films structure of which depends on ...
  • Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure 
    Bobrenko, Yu.N.; Pavelets, S.Yu.; Semikina, T.V.; Stadnyk, O.A.; Sheremetova, G.I.; Yaroshenko, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume ...
  • Thin silicon solar cells with SiОх /SiNx Bragg mirror rear surface reflector 
    Ivanov, I.I.; Nychyporuk, T.V.; Skryshevsky, V.A.; Lemiti, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    . Bragg reflectors consisting of sequence of dielectric layers with a quarter wavelengths optical thickness are promising to create solar cells of third generation. SiОх /SiNx Bragg mirror (BM) at the backside of textured ...
  • Third order nonlinear optical response of PbS quantum dots 
    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Mohanta, D.; Choudhury, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    PbS quantum dots of the average size 10 nm are synthesized in the polymer matrix (PVA) following chemical route. Optical absorption spectra reveal a large blue shift from the bulk absorption cutoff wavelength. Instead of ...
  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...
  • Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum 
    Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...
  • Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations 
    Pyziak, L.; Obermayr, W.; Zembrowska, K.; Kuzma, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. ...
  • Total energy, equation of states and bulk modulus of Si and Ge 
    Jivani, A.R.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A model potential describing electron-ion interaction is presented for intrinsic semiconductors Si and Ge. The present model potential is single parametric, continuous in r-space and weaker within core and Coulombic outside ...
  • Transducer based on surface plasmon resonance with thermal modification of metal layer properties 
    Kostiukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    With the purpose to improve such service characteristics of transducers on the basis of the surface plasmon resonance (SPR) as the sensitivity and stability, we have analyzed the influences of a structure and a relief of ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...
  • Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field 
    Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...
  • Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility ...
  • Tunable high-finesse narrow bandpass Fabry – Perot filter 
    Markov, V.B.; Khizhnyak, A.I.; Goren, V.; Cook, W.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper discusses the results of the analysis and experimental characterization of a narrow bandpass optical filter based on the Fabry – Perot interferometer configuration with a variable spacing between the mirrors ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...
  • Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination 
    Borovytsky, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that ...
  • Two-dimensional modeling the static parameters for a submicron field-effect transistor 
    Zaabat, M.; Draid, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor ...
  • Two-dimensional photonic crystals as perspective materials of modern nanoelectronics 
    Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photonic crystals are a dynamic direction of modern solid state physics. Today the intensive research (more than 80 %) is concentrated on two-dimensional photonic crystals which have functionality of three-dimensional ...
  • Ultrafast light-matter interaction in transparent medium 
    Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The ultrafast interaction between high power laser light and plasma has been studied theoretically. The theoretical simulations are based on the nonlinear Schrödinger equation taking into account group velocity dispersion, ...

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