Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Vladimirova, T.P. ; Kyslovs’kyy, Ye.M. ; Molodkin, V.B. ; Olikhovskii, S.I. ; Koplak, O.V. ; Kochelab, E.V.

Інший ID: PACS 61.72.Dd

URI: http://dspace.nbuv.gov.ua/handle/123456789/117799

Посилання: Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.

Підтримка: This work was performed with the financial support of the National Academy of Sciences of Ukraine (Contract No. 3.6.3.13-7/10-D ).

Дата: 2011

Завантажень: 420

Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Анотація:

Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double-crystal X-ray diffractometer. Based on the characterization results, which have been obtained by using the formulas of the dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types, the concentrations and average sizes of oxygen precipitates and dislocation loops after imposing the magnetic field and their dependences on time after its removing have been determined.

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