Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2
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dc.contributor.author	Savchyn, V.P.
dc.contributor.author	Stakhira, J.M.
dc.contributor.author	Fiyala, Ya.M.
dc.contributor.author	Furtak, V.B.
dc.date.accessioned	2017-06-13T16:44:18Z
dc.date.available	2017-06-13T16:44:18Z
dc.date.issued	2002
dc.identifier.citation	Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures / V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 176-179. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.40, 74.40
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121192
dc.description.abstract	Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa₂O₃-pGaSe heterojunction.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA