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dc.contributor.author Stronski, A.V.
dc.contributor.author Vlcek, M.
dc.contributor.author Stetsun, A.I.
dc.contributor.author Sklenar, A.
dc.contributor.author Shepeliavyi, P.E.
dc.date.accessioned 2017-06-10T07:47:02Z
dc.date.available 2017-06-10T07:47:02Z
dc.date.issued 1999
dc.identifier.citation Raman spectra of Ag- and Cu- photodoped chalcogenide films / A.V. Stronski, M. Vlcek, A.I. Stetsun, A. Sklenar, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 63-68. — Бібліогр.: 37 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.30, 78.66, 82.20C
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119862
dc.description.abstract Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for the spectra of photodoped As₄₀S₆₀, As₄₀S₄₀Se₂₀ layers, the shift of the main bands to the high frequency side and the appearance of the additional scattering bands in the low frequency spectral range are characteristic features. For the spectra of photodoped As₄₀S₆₀ layers, such shift and significant increase in scattering were not observed. Variations in the Raman spectra with photodoping by Ag or Cu are consistent with the supposition concerning normal covalent and coordinative bond formation between metal additives and chalcogen atoms. uk_UA
dc.description.sponsorship The authors wish to express their gratitude to Prof. I.Z. Indutnyi and Dr. A.A. Kudryavtsev for valuable discussion and critical reading the manuscript. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Raman spectra of Ag- and Cu- photodoped chalcogenide films uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA

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