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dc.contributor.author Shevchenko, V.B.
dc.contributor.author Makara, V.A.
dc.contributor.author Vakulenko, O.V.
dc.contributor.author Dacenko, O.I.
dc.contributor.author Rudenko, O.V.
dc.date.accessioned 2017-06-10T07:45:00Z
dc.date.available 2017-06-10T07:45:00Z
dc.date.issued 1999
dc.identifier.citation Evidence for photochemical transformations in porous silicon / V.B. Shevchenko, V.A. Makara, O.V. Vakulenko, O.I. Dacenko, O.V. Rudenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 50-53. — Бібліогр.: 17 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.55.Mb, S5.11
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119859
dc.description.abstract The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase rapidly under UV irradiation and to flatten out in several hours. The subsequent irradiation leads to intensity degradation, which may be explained by the luminescence fatigue effect. At the same time, the PLI of the unilluminated sample almost does not change during the experiment. It turned out that the anomaly as a small surge down is observed on the PLI evolution curve at the stage of the initial monotonous increase of PLI after a short-time (1 to 2 minutes) interruption of the laser illumination of the sample, whereas this anomaly is a surge up at the stage of the monotonous fall of the PLI curve. In the case of a long-time (tens of hours) discontinuation of illumination, the anomaly was similar for all the portions of the PLI curve. The described results are explained by effect of two competing factors which are the luminescence fatigue and light-induced formation of unstable (molecular) chemical bonds that can transform to the stable atomic ones. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Evidence for photochemical transformations in porous silicon uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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