Varistor-like current-voltage characteristic of porous silicon

dc.contributor.author	Vakulenko, O.V.
dc.contributor.author	Kondratenko, S.V.
dc.contributor.author	Shutov, B.M.
dc.date.accessioned	2017-06-03T04:58:04Z
dc.date.available	2017-06-03T04:58:04Z
dc.date.issued	1999
dc.identifier.citation	Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.80.Ng, s5.11
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119066
dc.description.abstract	The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Varistor-like current-voltage characteristic of porous silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA