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dc.contributor.author |
Lyashenko, O.V. |
|
dc.contributor.author |
Vlasenko, A.I. |
|
dc.contributor.author |
Veleschuk, V.P. |
|
dc.contributor.author |
Kisseluk, M.P. |
|
dc.date.accessioned |
2017-05-30T06:54:41Z |
|
dc.date.available |
2017-05-30T06:54:41Z |
|
dc.date.issued |
2010 |
|
dc.identifier.citation |
Acoustic-emission method for controlling the defect-formation
process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 43.35.+d, 43.50.+y, 72.70.+m, 73.50.TD, 78.60.Fi, 78.66.Fd |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118399 |
|
dc.description.abstract |
Сomplex researches of light-emitting structures based on А₃В₅ compounds
have been carried out. It has been shown that at current loading exceeding the acousticemission
threshold, there arises a change in the electroluminescence intensity, fluctuation
of current and light. It has been ascertained that natural ageing leads to a general
improvement of some practically important parameters of light-emitting structures, in
particular to increase of maximal admissible currents and reliability. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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