Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3 за датою випуску

Сортувати за: Порядок: Результатів:

  • Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • Jaguiro, P.; Stsiapanau, A.; Hubarevich, A.; Mukha, Y.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Electrochemical technologies have a high potential for display applications because of their cheapness and simplicity, easiness to scaling to large substrates and lowtemperature nature. However, in major display technologies ...
  • Strelchuk, V.V; Budzulyak, S.I.; Budzulyak, I.M; Ilnytsyy, R.V.; Kotsyubynskyy, V.O.; Segin, M.Ya.; Yablon, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Evolution of anatase phase for the TiO₂ nanocrystals at their laser irradiation is researched by the method of combinational light dispersion. The observed changes of intensity, frequency and halfwidth of TiO₂ phonon ...
  • Venger, E.F.; Ievtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the attenuated total reflectance technique, we studied the effect of strong uniform magnetic field H on the main properties of surface polaritons in ZnO single crystals. The used orientations were C || y , k ⊥ C , ...
  • Elkadadra, A.; Abouelaoualim, D.; Oueriagli, A.; Outzourhit, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined ...
  • Lendel, V.V.; Lomakina, O.V.; Mel’nychenko, L.Yu.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Within the Beattie spectroellipsometric method, we measured the ellipsometric parameters of thin Ті films deposited onto glass substrates by magnetron sputtering in argon atmosphere. Measurements were carried out at five ...
  • Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Formalized description of data transmission between technical means and an operator from the viewpoint of information security is presented. The most widely used symbolic and bar graph data representation forms are ...
  • Ushenko, Yu.O.; Istratiy, V.V.; Balanets’ka, V.O.; Kvasniyk, D.O.; Bachinsky, V.T.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Performed in this work are complex statistical and fractal analyses of phase properties inherent to birefringence networks of liquid crystals consisting of opticallythin layers prepared from synovial fluid taken from ...
  • Ushenko, Yu.O.; Misevich, I.Z.; Angelsky, A.P.; Bachinsky, V.T.; Telen’ga, O.Yu.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Adduced in this work are the results of investigation aimed at analysis of coordinate distributions for azimuths and ellipticity of polarization (polarization maps) in laser images of three types of phase-inhomogeneous ...
  • Mumimov, R.A.; Kanyazov, Sh.K.; Saymbetov, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of ...
  • Lyashenko, O.V.; Vlasenko, A.I.; Veleschuk, V.P.; Kisseluk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence ...
  • Fodchuk, I.; Balovsyak, S.; Borcha, M.; Garabazhiv, Ya.; Tkach, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been suggested the technique based on analysis of geometry and intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering diffraction for defining structural imperfection of diamond ...
  • Novіkov, S.M.; Fodchuk, І.M.; Fedortsov, D.G.; Struk, A.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations ...
  • Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data on degradation of photovoltaic and photoenergetic characteristics of silicon solar cells exposed by high-energy electrons and protons as well as low-energy protons have been obtained. The previously ...
  • Tolmachov, I.D.; Stronski, A.V.; Vlcek, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk ...
  • Agabekov, V.E.; Ivanova, N.A.; Kosmacheva, T.G.; Dlugunovich, V.A.; Tsaruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Scattering properties of directed polyvinyl alcohol films modified with titanium dioxide or silver nanoparticles and illuminated by a 0.63 μm linear polarized He-Ne laser radiation were investigated. Ability of the ...
  • Muravsky, A.; Agabekov, V.; Ariko, N.; Shachab, S.; Tolstik, A.; Malashko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    New guest-host dyes of red and purple colour suitable for fabrication of ultrathin film polarizer from polymerizable liquid crystals are developed. When the absorption spectrum of dye matches the photopic curve, samples ...
  • Andreev, A.; Andreeva, T.; Kompanets, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The process of FLC director reorientation in alternating electric field is considered for the case when interaction of FLC molecules with the substrates results in partial unwinding the helix structure and motion of ...
  • Hubarevich, A.; Jaguiro, P.; Mukha, Y.; Smirnov, A.; Solovjov, Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис