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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3 за датою випуску

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3 за датою випуску

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Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Tagiyev, B.G.; Madatov, R.S.; Aydayev, F.Sh.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge ...
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

Baranskyy, P.I.; Gaydar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, ...
Investigation of electron correlation effect on energy spectrum of two-electron systems in crystals with strong electron-phonon coupling

Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The influence of electron correlations (direct dependence of electronic wave function on distance between electrons) on energy spectra of two-electron systems (D-, F ', F₂-centers and bipolarons) in polar crystals with ...
Total energy, equation of states and bulk modulus of Si and Ge

Jivani, A.R.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

A model potential describing electron-ion interaction is presented for intrinsic semiconductors Si and Ge. The present model potential is single parametric, continuous in r-space and weaker within core and Coulombic outside ...
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence

Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals

Seitmuratov, M.S.; Klad'ko, V.P.; Gudymenko, O.I.; Datsenko, L.I.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters ...
Holographic interferometry as a method to study conformational changes in macromolecules

Barabash, Y.; Kharkyanen, V.; Zabolotny, M.; Sokolov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

This paper concerns with our measurements of reaction center (RC) volume changes in the course of photoactivation using the method of holographic interferometry. As a principal value, we studied changes of a solution ...
Many-body theory of all-optical quantum well logic gates

Pereira Jr., M.F.; Prado, M.; Sampaio, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

A many-body theory, based on the solutions of generalized semiconductor Maxwell-Bloch equations for coupled-band multiple quantum wells is applied to the description of the optical non linearities responsible for the ...
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate

Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated ...
Photo-enchanced defect reactions in CdS:Ag crystals

Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Two reversible photo-enhanced defect reactions proceeding under visible light illumination have been found in CdS:Ag crystals. The first process leads to the increase of crystal photosensitivity, which has been shown to ...
Dynamics of photoinduced instability in ferroelectric photorefractive crystals caused by space recharging trap waves

Morozovska, A.N.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

In the paper we theoretically consider the dynamics of the inner field generated by recharging trap waves propagation and spatial-temporal features of the photoinduced light scattering caused by these phenomena in the ...
Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

Stronski, A.V.; Vlcek, M.; Kostyukevych, S.A.; Tomchuk, V.M.; Kostyukevych, E.V.; Svechnikov, S.V.; Kudryavtsev, A.A.; Moskalenko, N.L.; Koptyukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes ...
Modelling optical spectra and obtaining information on parameters and features of semiconductor structures

Vasiljev, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Problems of semiconductor optical spectrum identification are considered in the paper. Some models for description of optical reflection spectra in semiconductors and semiconductor structures are presented. Shown is the ...
Optical size effects in thin gold films

Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The optical size effects that appear in thickness dependencies of refraction (n) and absorption (k) indexes, Brewster's quasiangle and dielectric constant e2 in thin gold films are discussed. All of them have oscillating ...
Influence of surface dimensional effects and interband transitions on absorption of light in aluminium

Mеlnichenko, L.Yu.; Tytarchuk, B.B.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Optical conductivity of aluminium with of large roughness surface were measured by a spectroellipsometric method in visible, near infrared and near ultra-violet region of the spectrum. Aluminium foil was used as a sample. ...
Electric and photophysical properties of holographic and electroluminescent media based on amorphous molecular semiconductors

Al-Kadhimi, A.J.; Davidenko, N.A.; Derevyanko, N.A.; Ishchenko, A.A.; Kuvshinsky, N.G.; Pavlov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Results of investigations of electric and photophysical properties inherent to films of amorphous molecular semiconductors doped with different sensitizers of photoconductivity for visible light are discussed. Such films ...
A free-space alignment technique for active optical waveguide components

Karim, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

In this paper an easy to use free-space alignment technique for the alignment of different active optical waveguide components is reported. This technique has successfully been implemented for the characterization of ...
Effect of mechanical stress on operation of diode temperature sensors

Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide ...
Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials

Kravetsky, M.Yu.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

On the basis of the balance model for convection-diffusion processes that occur during string chemical cutting (CC) of samples, we derive an analytical expression for the limiting CC rate at maximal use of etching agent. ...
Balance model for contactless chemo-mechanical polishing of wafers

Grigoriev, N.N.; Kravetsky, M.Yu.; Paschenko, G.A.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, ...

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