Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

Stronski, A.V. ; Vlcek, M. ; Kostyukevych, S.A. ; Tomchuk, V.M. ; Kostyukevych, E.V. ; Svechnikov, S.V. ; Kudryavtsev, A.A. ; Moskalenko, N.L. ; Koptyukh, A.A.

Інший ID: PACS: 42.40.Eq, 78.30.Ly

URI: http://dspace.nbuv.gov.ua/handle/123456789/121298

Посилання: Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements / A.V. Stronski, M. Vlcek, S.A. Kostyukevych, V.M. Tomchuk, E.V. Kostyukevych, S.V. Svechnikov, A.A. Kudryavtsev, N.L. Moskalenko, A.A. Koptyukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 284-287. — Бібліогр.: 17 назв. — англ.

Підтримка: The authors thank Ministry of Education and Science of Ukraine for financial support and express his gratitude to colleagues from Institute of Semiconductor Physics (NAS of Ukraine), Specialized Enterprizes "Holography" and "Optronics" for their help in carrying out the holographic experiments.

Дата: 2002

Завантажень: 342

Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements

Анотація:

Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes in their network structure including three types of piramidal units AsS₃/₂, AsSe₃/₂ and AsS(Se)₃/₂ as well as As₄S(Se)₄ and S(Se)n fragments in its initial state. Annealing or light exposure result in polymerization of the molecular groups and the decreasing number of homopolar bonds, which is thermodynamically favorable. Characteristics of sensivity to photon and electron exposure were investigated. Diffraction efficiency perfomances of a microrelief fabricated using these layers are presented.

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