Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Performance of optical and hybrid joint transform correlators for tasks of optical security 
    Muravsky, L.I.; Kulynych, Ya.P.; Maksymenko, O.P.; Voronyak, T.I.; Pogan, L.Y.; Vladimirov, F.L.; Kostyukevych, S.A.; Fitio, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Performance of optical and hybrid joint transform correlators (JTCs) for security verification of optical marks containing transformed phase masks (PMs) is studied. The peak-to-noise ratio (PNR) and relative intensity of ...
  • Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures 
    Savchyn, V.P.; Stakhira, J.M.; Fiyala, Ya.M.; Furtak, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe ...
  • Photoluminescent films of nanocrystalline silicon doped with metals 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V.; Venger, E.F.; Bazylyuk, I.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ...
  • Polar magneto-optical Kerr effect studies of interlayer exchange coupling in Fe/Tb bilayers and Fe/Au/Tb trilayers 
    Shypil, E.V.; Pogorilyy, A.M.; Pogoryelov, Ye.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Interlayer exchange coupling was studied. The investigations were carried out on bilayer (Fe/Tb) and trilayer (Fe/Au/Tb) ultrathin film structures. The films on silica substrate were prepared by electron-beam evaporation ...
  • Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines 
    Boltovets, N.S.; Kashin, G.N.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs ...
  • Recrystallization processes in screen-printed CdS films 
    Klad’ko, V.P.; Lytvyn, O.S.; Lytvyn, P.M.; Osipenok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F.; Korchevoy, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the ...
  • Solid-state laser with self-stabilized or linearly chirped output frequency 
    Lopiitchouk, M.; Peshko, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The specific regimes of the linear tuning and the frequency self-stabilization were proposed and analyzed theoretically in a diode pumped solid-state laser with a thin-film metallic selector.
  • The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices 
    Ahmad, I.; Omar, A.; Mikdad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal ...
  • The influence of depolarization field on dielectric and pyroelectric properties of ferroelectric films 
    Glinchuk, M.D.; Eliseev, E.A.; Stephanovich, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Calculations of the spontaneous polarization (Ps), dielectric susceptibility (c) and pyroelectric coefficient (P) of the ferroelectric films have been performed in the thermodynamic phenomenological theory framework. The ...
  • Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption 
    Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис