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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase 
    Saliy, Ya.P.; Freik, I.M.; Prokopiv (Jr), V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film ...
  • The resolution function and effective response of piezoelectric thin films in Piezoresponse Force Microscopy 
    Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The elastic Green function and resolution function in Piezoresponse Force Microscopy (PFM) of thin piezoelectric film capped on the rigid substrate are derived. The extrinsic size effect on the resolution function is ...
  • Finding of the optimal parameters of animated and stereographic rainbow diffractive images 
    Borisov, I.S.; Girnyk, V.I.; Kostyukevych, S.A.; Grygoruk, V.I.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We have considered the basic aspects of the technology of animated and stereographic rainbow images. These images can be included in Optical Security Devices (OSDs) in order to increase their structure complexity and to ...
  • Research of Structural Quality of Big-Size KDP Crystals 
    Salo, V.I.; Tkachenko, V.F.; Puzikov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown ...
  • Study of diamond-like carbon films doped with transition metals and used as cathodes for current creation in water 
    Primachenko, V.E.; Lukjanov, A.N.; Kirillova, S.I.; Chernobay, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Properties of diamond-like carbon films (DLCF) on n-Si substrates used as cathodes in Yb – DLCF (n-Si) water electrochemical system have been studied by current creation with water decomposition H2O → OH⁻ + H⁺ . The ...
  • Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers 
    Nazarov, A.N.; Lysenko, V.S.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial ...
  • Direct current transport mechanisms in n-InSe/p-CdTe heterostructure 
    Gorley, P.M.; Prokopenko, I.V.; Grushka, Z.M.; Makhniy, V.P.; Grushka, O.G.; Chervinsky, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current ...
  • Effect of molecular sieves on discrimination efficiency of a multisensor gas-analysis system 
    Kruglenko, I.V.; Shirshov, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated the effect of zeolite at the sample input of a gas-analysis system (Electronic Nose) on recognition of volatile molecular mixtures. It is shown that the NaX molecular sieves can remove ketone-type molecules ...
  • Instability of 2DEG interacting with drifting 3DEG 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Dispersion law is studied for high-frequency longitudinal plasma waves in 2DEG (the plane z = 0), separated by thin dielectric layer from half-limited 3DEG. It is shown that drift of 3DEG provokes for special conditions ...
  • Numerical study of electrical characteristics of conjugated polymer light-emitting diodes 
    Abouelaoualim, D.; Assouag, M.; Elmidaoui, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. In this work, the electronic properties of polymer lightemitting diodes devices are numerically studied. Our results show ...
  • Starting designs for broadband chirped mirrors 
    Pervak, V.Yu.; Telyatnikov, V.O.; Pervak, Yu.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The chirped mirror (CM) is one of the key elements in ultrafast optics. We investigate a problem of a CM designing. The series of starting designs for broadband CM are reported. The appropriate starting design can ...
  • Design of optical-electronic sensor for ablation of spacecraft heat protection 
    Hornostaev, G.; Pasichny, V.; Lytvynenko, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Results of designing and studying the characteristics of the fiber-optic sensor for the ablation of the low-sublimating heat protection which intended for the use on the being got down module of article “Mars-5” are ...
  • Morphology and optical properties of SnO₂ nanofilms 
    Smyntyna, V.A.; Filevskaya, L.N.; Grinevich, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Results of surface morphology and optical density investigations and the photoluminescence phenomenon were obtained for SnO₂ thin films. Films having nanosize of their grains ~ 10-15 nm were obtained using polymeric ...
  • Matrix models of bar graph data display for bicyclic excitation of the optoelectronic scale 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this work, being based on the theory of sets and matrix formulation of the information area for a bar graph display the author obtained a matrix description for electric signals necessary to form two variants of ...
  • A neural computation to study the scaling capability of the undoped DG MOSFET 
    Djeffal, F.; Guessasma, S.; Benhaya, A.; Bendib, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The DG MOSFET is one of the most promising candidates for further CMOS scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide range of system/circuit requirements (such as high-performance, ...

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