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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за автором "Belyaev, A.E."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за автором "Belyaev, A.E."

Сортувати за: Порядок: Результатів:

  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...

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