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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Сортувати за: Порядок: Результатів:

  • Electron-hole Fermi liquid in nanosized semiconductor structures 
    Litovchenko, V.G.; Grygoriev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium ...
  • Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch 
    Elkadadra, A.; Abouelaoualim, D.; Oueriagli, A.; Outzourhit, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined ...
  • Elimination of the data-dependent defects by doubling the frequency of driving signals for cholesteric LCDs 
    Rybalochka, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the standard waveform composition method for 2+2 dynamic drive schemes results in the dependence of image contrast on image data-content. In this paper, an implementation of this standard method with doubling the ...
  • Experimental studies of light-wave phase shift by polymer dispersed liquid crystal films 
    Dmitriev, S.M.; Dick, V.P.; Kostyuk, N.N.; Dick, T.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Polymermethacrylate (PMMA) and polyvinyl butyral (PVB) thin films with the dispersed liquid crystal droplets are prepared by the described technique. The measurements of light wave polarization-independent phase shift ...
  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in ...
  • Growth and optical properties of dye films and dye-in-polymer matrix deposited by vacuum evaporation 
    Grytsenko, K.; Doroshenko, T.; Kolomzarov, Yu.; Lytvyn, O.; Serik, M.; Tolmachev, O.; Slominski, Yu.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Searching new more effective materials for organic electroluminescent displays is continuing. The polymethine dyes is a class of organic materials that are very interesting for these purposes. Films of the polymethine ...
  • Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal 
    Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • Hydrogen gettering in annealed oxygen-implanted silicon 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Impurity scattering of band carriers 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...
  • Increase of data protection level for visual information in control systems 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Formalized description of data transmission between technical means and an operator from the viewpoint of information security is presented. The most widely used symbolic and bar graph data representation forms are ...
  • Influence of Cr doping on optical and photoluminescent properties of CdTe 
    Ilashchuk, М.I.; Parfenyuk, O.A.; Ulyanytskiy, K.S.; Brus, V.V.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional ...
  • Information security for optoelectronic ergatic system 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    System representation in view of information security for otoelectronic ergatic means is formed. Analytical description in the matrix form for corresponding systems is received. Properties of the received bidimensional ...
  • Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods 
    Savchenko, D.V.; Pöppl, A.; Kalabukhova, E.N.; Venger, E.F.; Gadzira, M.P.; Gnesin, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear ...
  • ITO layers modified in glow discharge plasma for Nematic Liquid Crystal alignment 
    Kolomzarov, Yu.; Oleksenko, P.; Rybalochka, A.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Influence of ionic and plasma treatment on orienting properties of indium-tinoxide (ITO) films was investigated. The stable tilt angle generation of nematic liquid crystal (NLC) molecules was attended. Dependences of NLC ...
  • LED lighting. Creation and application peculiarities 
    Trofimov, Yu.V.; Lishik, S.I.; Posedko, V.S.; Tsvirko, V.I.; Pautino, А.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    State-of-the-art condition of LED illumination engineering for street lighting, its requirements, construction technological features of its creation, optimization ways of optical, thermal and electrical luminaire ...
  • Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties 
    Bilozertseva, V.I.; Khlyap, H.M.; Shkumbatyuk, P.S.; Dyakonenko, N.L.; Mamaluy, A.O.; Gaman, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental ...
  • Low voltage FLC for fast active matrix displays 
    Andreev, A.; Andreeva, T.; Kompanets, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The process of FLC director reorientation in alternating electric field is considered for the case when interaction of FLC molecules with the substrates results in partial unwinding the helix structure and motion of ...
  • Magnetic susceptibility of n- and p-Si single crystals containing thermodonors 
    Babich, V.М.; Luchkevych, M.M.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors ...

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