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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Savchuk, A.I.; Stolyarchuk, I.D.; Savchuk, O.A.; Shporta, O.A.; Stefaniuk, I.; Rogalska, I.; Sheregii, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We report a study of the layered diluted magnetic semiconductor (DMS) Pb₁₋xMnxI₂ in 3D bulk layers and nanocrystal form by using optical absorption, photoluminescence and electron paramagnetic resonance (EPR). The samples ...
  • Rubish, V.M.; Stefanovich, V.O.; Maryan, V.M.; Mykaylo, O.A.; Shtets, P.P.; Kaynts, D.I.; Yurkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these ...
  • Fediv, V.I.; Rudko, G.Yu.; Savchuk, A.I.; Gule, E.G.; Davydenko, I.S.; Olar, O.I.; Volkov, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Colloidal CdS:Mn nanoparticles were synthesized in water solutions of the polymer polyvinyl-pyrrolidone (PVP), the surfactant cetyl-trimethyl-ammonium bromide (CTAB) and the mixture of PVP and CTAB. The sizes of nanoparticles ...
  • Gorbov, I.V.; Kryuchyn, A.A.; Grytsenko, K.P.; Manko, D.Yu.; Borodin, Yu.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Pits 250 – 300 - nm wide were obtained on the surface of thin organic nanocomposite film using master-disc laser-burning station with 405 nm laser beam focused by 0.85 NA lens. The film with obtained pits was used as a ...
  • Holovatsky, V.A.; Bernik, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Theoretical investigation of the influence of magnetic and electric fields on the energy spectrum and wave functions of electron in semiconductor spherical layer has been performed. The case of co-directed electric and ...
  • Konakova, R.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ...
  • Korkishko, R.M.; Kostylyov, V.P.; Prima, N.A.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of ...
  • Denysyuk, R.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. ...
  • Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), ...
  • Byelobrov, V.O.; Benson, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An infinite dielectric wire grating in free space is known to possess very high-Q resonances at the frequencies close to the Rayleigh anomalies. Still a practical implementation of such a resonator may require its ...
  • Babentsov, V.N.; Boyko, V.A.; Gasan-zade, S.G.; Shepelski, G.A.; Stariy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized ...
  • Busko, T.O.; Kulish, M.P.; Dmytrenko, O.P.; Vityuk, N.V.; Eremenko, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin nanocrystalline films of ТіО₂, TiO₂/ZrO₂, TiO₂/ZrO₂/SiO₂, TiO₂/ZrO₂/SiO₂/Ag and TiO₂/ZrO₂/SiO₂/Au were prepared using the sol-gel synthesis method. In this paper, we determined the bandgap for direct and indirect ...
  • Vuichyk, M.V.; Tsybrii, Z.F.; Lavoryk, S.R.; Svezhentsova, K.V.; Virt, I.S.; Chizhov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The morphological properties of the surface and optical characteristics of nanocomposite ZnO:Co structures grown on substrates of monocrystalline silicon and sapphire by pulsed laser deposition (PLD) method have been ...
  • Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, ...
  • Kossko, I.A.; Denisov, A.Ye. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) ...
  • Zhulay, D.S.; Fedorenko, D.V.; Koval’chuk, A.V.; Bugaychuk, S.A.; Klimusheva, G.V.; Mirnaya, T.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electrical properties of mesogenic cadmium octanoate composites containing CdS nanoparticles (NPs) have been studied for the first time. Semiconductor CdS spherical NPs (sizes of 2.5 nm) were chemically synthesized in ...
  • Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics ...

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