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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17 за назвою

Сортувати за: Порядок: Результатів:

  • A determination of propagation constants of symmetric planar waveguide modes in a frequency domain 
    Fitio, V.M.; Romakh, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In a new method of finding propagation constants of waveguide modes, the Fourier transform to wave equation is used. We change the differential equation by the integral one. Then we represent the latter equation in a ...
  • A model for non-thermal action of microwave radiation on oxide film/semiconductor structures 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination ...
  • Analysis of features of recombination mechanisms in silicon solar cells 
    Korkishko, R.M.; Kostylyov, V.P.; Prima, N.A.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of ...
  • Carrier transport mechanisms in InSb diffusion p-n junctions 
    Sukach, A.; Tetyorkin, V.; Voroschenko, A.; Tkachuk, A.; Kravetskii, M.; Lucyshyn, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures ...
  • Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions 
    Denysyuk, R.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. ...
  • Comparative studies of optical absorption, photoluminescence and EPR spectra of PbMnI₂ bulk layers and nanocrystals 
    Savchuk, A.I.; Stolyarchuk, I.D.; Savchuk, O.A.; Shporta, O.A.; Stefaniuk, I.; Rogalska, I.; Sheregii, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We report a study of the layered diluted magnetic semiconductor (DMS) Pb₁₋xMnxI₂ in 3D bulk layers and nanocrystal form by using optical absorption, photoluminescence and electron paramagnetic resonance (EPR). The samples ...
  • Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms 
    Kondryuk, D.V.; Kramar, V.M.; Kroitor, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the ...
  • Conductivity type conversion in p-CdZnTe under pulsed laser irradiation 
    Tetyorkin, V.V.; Sukach, A.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region ...
  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics 
    Kudryk, Ya.Ya.; Shynkarenko, V.V.; Slipokurov, V.S.; Bigun, R.I.; Kudryk, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. ...
  • Dielectric permittivity of (Ag₃AsS₃)x(As₂S₃)₁₋x superionic glasses and composites 
    Studenyak, I.P.; Neimet, Yu.Yu.; Orliukas, A.F.; Kežionis, A.; Kazakevičius, E.; Šalkus, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Complex dielectric permittivity of (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3−0.9) superionic glasses and composites at 300 K were studied. A decrease of the real part of dielectric permittivity with frequency by almost five orders ...
  • Dislocation emission caused by different types of nanoscale deformation defects in CdTe 
    Babentsov, V.N.; Boyko, V.A.; Gasan-zade, S.G.; Shepelski, G.A.; Stariy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized ...
  • Effect of magnetic and electric fields on optical properties of semiconductor spherical layer 
    Holovatsky, V.A.; Bernik, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Theoretical investigation of the influence of magnetic and electric fields on the energy spectrum and wave functions of electron in semiconductor spherical layer has been performed. The case of co-directed electric and ...
  • Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals 
    Konakova, R.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ...
  • Efficient core-SiO₂/shell-Au nanostructures for surface enhanced Raman scattering 
    Yukhymchuk, V.O.; Hreshchuk, O.M.; Valakh, M.Ya.; Skoryk, M.A.; Efanov, V.S.; Matveevskaya, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The efficient SERS (surface enhanced Raman scattering) substrates that are films of nanoparticles (NP) of the “core–shell” type, where the core of SiO2, and the shell of gold nanoparticles, were developed in this work. ...
  • Electric conductivity studies of composites based on (Cu₁₋xAgx)₆PS₅I superionic conductors 
    Studenyak, I.P.; Buchuk, R.Yu.; Bendak, A.V.; Yamkovy, O.O.; Kazakevicius, E.; Šalkus, T.; Kežionis, A.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The composites based on superionic (Cu₁₋xAgx)₆PS₅I solid solutions were prepared by mixing of microcrystalline powder with polyvinylacetate glue. The temperature and frequency behaviour of the total electric conductivity ...
  • Electro-conductive properties of cadmium octanoate composites with CdS nanoparticles 
    Zhulay, D.S.; Fedorenko, D.V.; Koval’chuk, A.V.; Bugaychuk, S.A.; Klimusheva, G.V.; Mirnaya, T.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electrical properties of mesogenic cadmium octanoate composites containing CdS nanoparticles (NPs) have been studied for the first time. Semiconductor CdS spherical NPs (sizes of 2.5 nm) were chemically synthesized in ...
  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide 
    Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe 
    Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, ...
  • Electron structure of TiO₂ composite films with noble metal nanoparticles 
    Busko, T.O.; Kulish, M.P.; Dmytrenko, O.P.; Vityuk, N.V.; Eremenko, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin nanocrystalline films of ТіО₂, TiO₂/ZrO₂, TiO₂/ZrO₂/SiO₂, TiO₂/ZrO₂/SiO₂/Ag and TiO₂/ZrO₂/SiO₂/Au were prepared using the sol-gel synthesis method. In this paper, we determined the bandgap for direct and indirect ...

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