Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms

Abstract

Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energy