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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites 
    Trunov, M.L.; Lytvyn, P.M.; Nagy, P.M.; Oberemok, O.S.; Durkot, M.O.; Tarnaii, A.A.; Prokopenko, I.V.; Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have established that mass-transport processes in two types of amorphous materials, based on light-sensitive inorganic compounds like Se and As₂₀Se₈₀ chalcogenide glasses (ChG), can be enhanced at the nanoscale in the ...
  • Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method 
    Zayachuk, D.M.; Ilyina, O.S.; Kaczorowski, D.; Mikityuk, V.I.; Shlemkevych, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Presented in this work are the results of the first systematic study of magnetic properties inherent to surface layers of PbTe:Eu crystals grown from melt with a low initial concentration of Eu impurity using the ...
  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Nonadditive changes in conductivity of micro PDLC under the influence of carbon nanotubes and magnetic nanoparticles 
    Kopčansky, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracka, M.; Tomašovičova, N.; Tomčo, L.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Investigated in this work has been the effect of impurities – magnetic nanoparticles (MN) and multiwall carbon nanotubes (MWNT) – separately and together on morphology and dielectric properties of nematic liquid crystal ...
  • Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films 
    Rubish, V.M.; Gera, E.V.; Durcot, M.O.; Pop, M.M.; Kostyukevich, S.O.; Kudryavtsev, A.A.; Mykulanynets-Meshko, O.S.; Rigan, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral ...
  • Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell 
    Abdelhakim Mahdjoub; Lazhar Hadjeris (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as ...
  • Studying anisotropic properties of longitudinal inhomogeneous nondepolarizing media with elliptical phase anisotropy 
    Kolomiets, I.S.; Savenkov, S.N.; Oberemok, Ye.A.; Klimov, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, basing on the anisotropic properties of longitudinal inhomogeneous nondepolarizing media with linear phase anisotropy, more general type of media with elliptical phase anisotropy was studied. The features ...
  • Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum 
    Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...

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