Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4
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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

Sachenko, A.V. ; Belyaev, A.E. ; Boltovets, N.S. ; Kapitanchuk, L.M. ; Klad’ko, V.P. ; Konakova, R.V. ; Kuchuk, A.V. ; Korostinskay, T.V. ; Pilipchuk, A.S. ; Sheremet, V.N. ; Mazur, Yu.I. ; Ware, M.E. ; Salamo, G.J.

Інший ID: PACS 73.40.Cg, 73.40.Ns, 85.40.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/117817

Посилання: Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ.

Підтримка: The Ukrainian coauthors had a support from the State Target Scientific and Technical Program of Ukraine “Nanotechnologies and nanomaterials” for 2010-2014.

Дата: 2013

Завантажень: 663

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

Анотація:

We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve.

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