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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4
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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
Інший ID:
PACS 78.66.Jg
Посилання:
Photo- and thermally-induced changes in the optical properties
of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ.
Дата:
2013
Переглядів:
719
Завантажень:
619
Анотація:
The optical transmissions spectra of amorphous Ge-S-Se films of chemical
compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation,
have been measured over the whole 400 to 800 nm spectral range. It has been ascertained
that annealing of the films leads to the absorption edge shift into the short-wave spectral
region. The values of pseudo-gap width Eg and film refraction index n have been
determined. Changes in optical properties of films are caused by structural
transformations taking place in them under laser illumination and annealing.
