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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за назвою

Сортувати за: Порядок: Результатів:

  • 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
  • A subharmonic mixer for the 220–325 GHz frequency range 
    Zorenko, A.V.; Kolesnik, N.V.; Kritskaya, T.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V.; Ryzhanovich, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have made a subharmonic mixer (SHM) for the 220–325 GHz frequency range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The subharmonic mixer design was based on a GaAs mixer Schottky ...
  • Comparison of properties inherent to wave plates and Fresnel rhomb 
    Kulish, M.R.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Principles of functioning and technical characteristics of wave plates and Fresnel rhomb are analyzed, and the properties of these optical elements are compared. Main fields of application are discussed.
  • Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB₂–TiС ceramic composites 
    Totsky, I.N.; Popov, A.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Considered in this paper is the effect of electron irradiation on the phasestructural state and micromechanical characteristics of reactively- and nonreactivelypressed TiB₂–TiС composite ceramic materials. It is shown ...
  • Effect of magnetic nanoparticles with various geometrical shapes on morphology and dielectric properties of nanodispersions of nematic liquid crystal in polymer matrix 
    Kopčansky, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracka, M.; Tomašovičova, N.; Tomčo, L.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M.; Lad, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Prepared in this work are dispersions of nematic liquid crystal in polyvinyl alcohol with sizes of liquid phase inclusions less than one micrometer (nano-polymer dispersed liquid crystal (PDLC)) by changing technology ...
  • Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN 
    Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
  • Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN 
    Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow ...
  • Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites 
    Totsky, I.M.; Shynkarenko, V.V.; Popov, O.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied the effect of neutron irradiation on composite material HfC-HfB₂- C made using rapid reactive hot pressing technology. The histograms of microhardness and results of X-ray phase analysis, obtained both before ...
  • Effect of optical losses irregularity on wideband fiber Raman amplification for total telecom window in silica fibers 
    Felinskyi, G.S.; Dyriv, M.Y.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Raman threshold pump power and optical amplification band calculations adjusted for attenuation dispersion in the range of total S+C+L telecom window of silica fibers (roughly from 1.46 to 1.62 μm) are presented. It ...
  • Electron mobility in the GaAs/InGaAs/GaAs quantum wells 
    Vainberg, V.V.; Pylypchuk, A.S.; Baidus, N.V.; Zvonkov, B.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the ...
  • Electron structure of the equilibrium and metastable phases in superionic Li₂SiS₃ 
    Bletskan, D.I.; Vakulchak, V.V.; Glukhov, K.E.; Mykaylо, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The calculations of a band structure E(k), the total N(E) and partial densities of electron states, as well as spatial distribution of the valence charge ρ(r) for the equilibrium (e) and metastable (m) phases of ...
  • Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs) 
    Litsis, O.O.; Ovchynnikov, V.A.; Sliva, T.Yu.; Amirkhanov, V.M.; Sorokin, V.M.; Minyailo, M.A.; Kolomzarov, Yu.V.; Tytarenko, P.A.; Minakova, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, the photo- and electroluminescence properties of new red phosphores based on europium complexes with carbacylamidophosphate (CAPh) ligands and additional aromatic ligands 1,10-phenantroline and 4,4'-bipyridine ...
  • Features of piezoresistance in heavily doped n-silicon crystals 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not ...
  • Features of the development of LED spotlight for local illumination of extended objects 
    Kudrautsau, K.A.; Kernazhytski, Y.V.; Tsvirka, V.I.; Trofimov, Yu.V.; Posedko, V.S.; Posedko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The peculiarities of extra narrow-angle LED spotlight development for accent lighting have been described. The optical layout of lighting fixture was developed. The mathematical model that can be used to calculate the ...
  • Generation of optical vortices in rotating uniaxial crystal for light propagation along the perpendicular to its optical axis 
    Sokolenko, B.V.; Rubass, A.F.; Volyar, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have experimentally considered evolution of the Gaussian beam propagating nearly perpendicular to the uniaxial crystal axis. Also we have analyzed the spin and orbital angular momenta and found oscillations of the ...
  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • High-pole LED lighting system 
    Trofimov, Y.V.; Lishik, S.I.; Dolgushin, V.V.; Kernazhytski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Different kinds of design of the 25-meter high-pole LED lighting system with 16 or 9 LED Street Lights “Phoenix” mounted on its crown (corona) have been suggested. The crown consists of two tiers. Some luminaries (8 ...
  • Influence of cation substitution on phase transition and optical absorption edge in Cu₆(P₁₋xAsx)S₅I mixed crystals 
    Studenyak, I.P.; Kranjčec, M.; Kayla, M.I.; Izai, V.Yu.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Cu₆(P₁₋xAsx)S₅I mixed crystals were grown using chemical vapour transport. Temperature isoabsorption investigations of optical absorption edge enable to reveal anomalies typical for the first- and second-order phase ...
  • Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions 
    Tetyorkin, V.V.; Sukach, A.V.; Tkachuk, A.I.; Movchan, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage ...
  • Interband absorption and its relation to the electronic structure of Co-Cr solid solutions 
    Bondar, V.M.; Stashchuk, V.S.; Polianska, O.P.; Kudin, V.G.; Statsenko, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The refraction n and absorption χ indices of paramagnetic Сo-Cr alloys with 10, 20 and 35% chromium concentrations were measured within the spectral range 0.23 to 2.8 µm (0.44…5.36 eV) at room temperature by spectral ...

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