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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за датою випуску

Сортувати за: Порядок: Результатів:

  • Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances 
    Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic ...
  • Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, ...
  • Properties of the crystalline silicon strained via cavitation impact 
    Savkina, R.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning ...
  • Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells 
    Brus, V.V.; Maryanchuk, P.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent ...
  • Singular beams with transverse electric and transverse magnetic fields 
    Fadeyeva, T.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have obtained the solutions of the paraxial wave equation in free space and homogeneous media in the form of transverse electric (TE) and transverse magnetic (TM) fields with Laguerre-Gaussian (LG) and Hermite-Gaussian ...
  • Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions 
    Tetyorkin, V.V.; Sukach, A.V.; Tkachuk, A.I.; Movchan, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage ...
  • Comparison of properties inherent to wave plates and Fresnel rhomb 
    Kulish, M.R.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Principles of functioning and technical characteristics of wave plates and Fresnel rhomb are analyzed, and the properties of these optical elements are compared. Main fields of application are discussed.
  • Magnetic field-stimulated change of photovoltage in solar silicon crystals 
    Korotchenkov, O.O.; Steblenko, L.P.; Podolyan, A.O.; Kalinichenko, D.V.; Tesel’ko, P.O.; Kravchenko, V.M.; Tkach, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical ...
  • Interband absorption and its relation to the electronic structure of Co-Cr solid solutions 
    Bondar, V.M.; Stashchuk, V.S.; Polianska, O.P.; Kudin, V.G.; Statsenko, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The refraction n and absorption χ indices of paramagnetic Сo-Cr alloys with 10, 20 and 35% chromium concentrations were measured within the spectral range 0.23 to 2.8 µm (0.44…5.36 eV) at room temperature by spectral ...
  • Electron structure of the equilibrium and metastable phases in superionic Li₂SiS₃ 
    Bletskan, D.I.; Vakulchak, V.V.; Glukhov, K.E.; Mykaylо, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The calculations of a band structure E(k), the total N(E) and partial densities of electron states, as well as spatial distribution of the valence charge ρ(r) for the equilibrium (e) and metastable (m) phases of ...
  • Features of piezoresistance in heavily doped n-silicon crystals 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not ...
  • A subharmonic mixer for the 220–325 GHz frequency range 
    Zorenko, A.V.; Kolesnik, N.V.; Kritskaya, T.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V.; Ryzhanovich, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have made a subharmonic mixer (SHM) for the 220–325 GHz frequency range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The subharmonic mixer design was based on a GaAs mixer Schottky ...
  • Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix 
    Nikolenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature ...
  • The influence of temperature on optical properties of merocyanine dye thin films 
    Sieryk, M.M.; Doroshenko, T.P.; Grytsenko, K.P.; Navozenko, O.M.; Tolmachev, O.I.; Slominski, Yu.L.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Merocyanine dye thin films have been investigated using optical microscopy methods. The films were deposited using the method of thermal evaporation. The influence of substrate type and temperature on optical properties ...
  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...
  • ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure 
    Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...
  • Effect of optical losses irregularity on wideband fiber Raman amplification for total telecom window in silica fibers 
    Felinskyi, G.S.; Dyriv, M.Y.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Raman threshold pump power and optical amplification band calculations adjusted for attenuation dispersion in the range of total S+C+L telecom window of silica fibers (roughly from 1.46 to 1.62 μm) are presented. It ...
  • The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system 
    Rubish, V.M.; Bih, L.; Mykaylo, O.A.; Gorina, O.V.; Maryan, V.M.; Gasinets, S.M.; Solomon, A.M.; Lazor, P.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    (As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of ...
  • Simulating the diffraction grating reflectivity using effective medium theory 
    Goloborodko, A.A.; Goloborodko, N.S.; Oberemok, Ye.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The features of optical radiation interaction with surface of gratings are investigated. The diffraction grating is proposed to be used in the effective medium model to test nanostructured surfaces. This object allows ...
  • Lateral multijunction photovoltaic cells 
    Sachenko, A.V.; Kulish, M.R.; Sokolovskyi, I.O.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic ...

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